Damage mechanics of electromigration induced failure
نویسندگان
چکیده
Electromigration is a major road block in the pursuit of nanoelectronics and next generation power electronics. The current density in the state-of-the-art microelectronics solder joints is about 10 A/cm. In the next generation nanoelectronics solder joints this current density is expected to increase by an order of magnitude, at least. In this paper, a new damage mechanics formulation is implemented in a general finite element procedure and used for simulation of solder joints electromigration induced failure. Nonlinear viscoplastic time-dependent nature of the material and current crowding effects are taken into account in the formulation. The model is verified against test data. 2007 Elsevier Ltd. All rights reserved.
منابع مشابه
Joints under Electric Current Stresses Experimental Damage Mechanics of Micro / Power Electronics Solder
Experimental damage mechanics of flip chip solder joints under current stressing is studied using 20 test vehicle flip chip modules. Three different failure modes are observed. The dominant damage mechanism is caused by the combined effect of electromigration and thermomigration, where void nucleation and growth lead to the ultimate failure of the module. It is observed that thermomigration dri...
متن کاملComputational damage mechanics of electromigration and thermomigration
Articles you may be interested in Thermomigration and electromigration in Sn58Bi solder joints Electromigration in flip chip solder joints having a thick Cu column bump and a shallow solder interconnect Effect of entropy production on microstructure change in eutectic SnPb flip chip solder joints by thermomigration Appl. Reliability of solder joints under Electromigration (EM) and Thermomigrati...
متن کاملModeling Electromigration Lifetimes of Copper Interconnects
A model for early failure due to electromigration in copper dualdamascene interconnects is proposed. The model is based on analytical expressions obtained from solutions of electromigration stress build-up assuming slit void growth under the interconnect vias. It is demonstrated that the model satisfactorily describes the complex physics of void nucleation and growth of the electromigration dam...
متن کاملNoise and Reliability in Simulated Thin Metal Films #$%&'()*+,*-'./)0,# $%7'23%@0/3*#a%#./b0b/02%'#a0++c./d*2@'e%*/0f#g+0332*/%)',#./d*2@'3%)',#h0+0)*@i/%)'e%*/%,# J/%k02(%3l#a%#&%('# 1,2.%33%*4'(('//)(%* Noise and Reliability in Simulated Thin Metal Films
Many macroscopic aspects of electromigration damage in thin metal films have been investigated by means of Monte Carlo simulations based on simplified physical model. The employed model, can be described as a middle-scale model, in which the physical system is modeled with a high level of abstraction, without a detailed atomic physical model of the system. Among the many effects of the electrom...
متن کاملDamage mechanics of electromigration and thermomigration in lead-free solder alloys under alternating current: An experimental study
Electromigration and thermomigration reliability of Sn96.5%Ag3.0%Cu0.5 (SAC305 by weight) solder joints under alternating current is studied experimentally with the maximum current density from 2.1 10 A/cm to 1.76 10 A/cm, and frequency from 100 kHz to 4 MHz. During the experiment, hot spots are observed at current crowding corners and the skin layer of solder joints. As a result, highly locali...
متن کامل